Diodes LMN400B01 - Manual (Page 7)

LMN400B01
Document number: DS30699 Rev. 8 - 2
7 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics
(cont.)
0
T , JUNCTION TEMPERATURE ( C)
Fig. 16
j
°
Static Drain-Source On-State Resistance
vs. Junction Temperature
V = 10V
Pulsed
GS
I = 300mA
D
I = 150mA
D
I
, REVE
RSE DR
AIN CU
RRENT
(
A
)
DR
V = 0V
Pulsed
GS
T = -55 C
A
°
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = 0 C
A
°
T = -25 C
A
°
1
I
, R
EVERS
E
DRAI
N CURRE
NT
(
A
)
S
V = 0V
GS
V = 10V
GS
T = 25°C
Pulsed
A
g
, F
O
RW
ARD T
RA
NSCONDUCT
ANC
E
(
m
S)
FS
T = 25 C
A
°
T = -25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
T = 125 C
A
°
T = 150 C
A
°