Diodes LMN400B01 - Manual (Page 6)

LMN400B01
Document number: DS30699 Rev. 8 - 2
6 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Output Characteristics
DS
I,
D
R
A
IN
C
U
R
R
E
N
T
(
A
)
D
V = 3V
GS
V = 4V
GS
V = 5V
GS
V = 10V
GS
V = 6V
GS
V = 8V
GS
T = 25 C
A
°
V , GATE-SOURCE VOLTAGE (V)
Fig. 11 Transfer Characteristics
GS
I,
D
R
AI
N
C
U
R
R
E
N
T (
A
)
D
0 1 2 3 4 5
T =-55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
V = 10V
DS
T , JUNCTION TEMPERATURE (°C)
Fig. 12 Gate Threshold Voltage
vs. Junction Temperature
J
1.0
1.2
1.4
1.6
1.8
2
2.2
-50 -75 -25 0 25 50 75 100 125 150
V = 10V
V = V
I = 0.25mA
Pulsed
DS
DS GS
D
I DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
D,
T = -55 C
A
°
T = 125 C
A
°
V = 5V
Pulsed
GS
T = 25 C
A
°
T = 85 C
A
°
T = 150 C
A
°
1
I , DRAIN CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance
vs. Drain Current
D
4
V = 10V
Pulsed
GS
T = 150 C
A
° T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
0
V GATE SOURCE VOLTAGE (V)
Fig. 15 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
I = 115mA
D
I = 50mA
D
T = 25 C
Pulsed
A
°
R
,
S
T
A
T
IC
D
R
A
IN
-S
O
U
R
C
E
O
N
-S
T
A
T
E
R
E
S
IS
T
A
N
C
E
(
)
D
S
(O
N
)
W