Diodes LMN400B01 - Manual (Page 2)

LMN400B01
Document number: DS30699 Rev. 8 - 2
2 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P D
300 mW
Power Derating Factor above +100°C P
DER
2.4 mW/°C
Output Current I
OUT
400 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Note 5) R θJA 417 °C/W
Maximum Ratings:
Pre-Biased PNP Transistor (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Supply Voltage V
CC
-50 V
Input Voltage V
IN
-6 to +5 V
Output Current I
C
-400 mA
Maximum Ratings:
ESD Protected N-Channel MOSFET (Q2)
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Drain Gate Voltage (R
GS
≤1MΩ) V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed (tp < 50µS)
V GSS
+/-20
V
+/-40
Drain Current (Note 5) Continuous (V
GS
= 10V)
Pulsed (tp <10µS, Duty Cycle <1%)
I
D
115
mA
800
Continuous Source Current I
S
115 mA
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.