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Diodes LMN400B01 User Manual

Page 4

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LMN400B01

Document number: DS30699 Rev. 8 - 2

4 of 9

www.diodes.com

July 2012

© Diodes Incorporated

LMN400B01





Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q2)

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min Typ Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

V

(BR)DSS

60

V

V

GS

= 0V, I

D

= 10µA

Zero Gate Voltage Drain Current

I

DSS

1 µA

V

GS

=0V, V

DS

= 60V

Gate-Body Leakage Current, Forward

I

GSSF

0.95 mA

V

GS

= 20V, V

DS

= 0V

Gate-Body Leakage Current, Reverse

I

GSSR

-0.95 mA

V

GS

= -20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Source Threshold Voltage

V

GS(th)

1 1.6 2.5

V

V

DS

= V

GS

, I

D

= 0.25mA

Static Drain-Source On-State Voltage

V

DS(on)

0.09 1.5

V

V

GS

= 5V, I

D

= 50mA

0.6 3.75

V

GS

= 10V, I

D

= 500mA

On-State Drain Current

I

D(on)

500

mA

V

GS

= 10V,

V

DS

≥ 2*V

DS(ON)

Static Drain-Source On Resistance

R

DS(on)

1.6 3

V

GS

= 5V, I

D

= 50mA

1.2 2

V

GS

= 10V, I

D

= 500mA

Forward Transconductance

g

FS

80 260

mS

V

DS

≥2*V

DS(ON)

, I

D

= 200 mA

Gate Pull-Down Resistor, +/- 35

%

R3

37

k

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

50 pF

V

DS

= -25V, V

GS

= 0V, f = 1MHz

Output Capacitance

C

oss

25 pF

Reverse Transfer Capacitance

C

rss

5 pF

SWITCHING CHARACTERISTICS*

Turn-On Delay Time

td

(on)

20 ns

V

DD

= 30V, V

GS

=10V,

I

D

= 200mA,

R

G

= 25

Ω, R

L

= 150

Turn-Off Delay Time

td

(off)

40 ns

SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward On-Voltage

V

SD

0.88 1.5 V

V

GS

= 0V, I

S

= 300 mA*

Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)

I

S

300 mA

aximum Pulsed Drain-Source Diode Forward Current

I

SM

800 mA

* Pulse Test: Pulse width, tp <300µs, Duty Cycle, d

≤0.02


0

50

100

25

50

75

100

125

150

175

P

,

P

O

WE

R

DISS

IP

A

T

IO

N (

m

W

)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 3 Max Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

0

Note 5

0

50

100

150

200

500

450

400

350

300

250

0

0.5 1.0 1.5 2.0 2.5 3.0 3.5

5.5

5.0

4.5

4.0

I,

C

O

LL

E

C

T

O

R

C

U

R

R

E

N

T

(mA

)

C

V

COLLECTOR VOLTAGE(V)

Fig. 4 Output Current vs.

Voltage Drop (Pass Element PNP)

CE_SAT

lb = 1mA

lb = 2mA

lb = 3mA

lb = 4mA

lb = 5mA

lb = 6mA

lb = 10mA

lb = 9mA

lb = 8mA

lb = 7mA

T = 25°C

A