Diodes LMN400B01 User Manual
Page 3
LMN400B01
Document number: DS30699 Rev. 8 - 2
3 of 9
July 2012
© Diodes Incorporated
LMN400B01
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min Typ Max Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Cut Off Current
I
CBO
⎯
⎯
-500 nA
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
⎯
⎯
-1 µA
V
CE
= -50V, I
B
= 0
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
⎯
⎯
V
I
C
= -10µA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
⎯
⎯
V
I
C
= -2mA, I
B
= 0
Input Off Voltage
V
I(OFF)
-0.3
⎯
⎯
V
V
CE
= -5V, I
C
= -100µA
Ouput Current
I
O(OFF)
⎯
⎯
-1 µA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS (Note 6)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.06 -0.15 V
I
C
= -10mA, I
B
= -0.3mA
⎯
-0.18 -0.30 V
I
C
= -300mA, I
B
= -30mA
⎯
-0.28 -0.60 V
I
C
= -500mA, I
B
= -50mA
DC Current Gain
h
FE
55 220
⎯
⎯
V
CE
= -5V, I
C
= -50mA
55 260
⎯
⎯
V
CE
= -5V, I
C
= - 100mA
55 265
⎯
⎯
V
CE
= -5V, I
C
= -200 mA
55 225
⎯
⎯
V
CE
= -5V, I
C
= -400mA
Input On Voltage
V
I(ON)
-3.0 -1.5
⎯
V
DC
V
O
= -0.3V, II
C
= -2mA
Input Current
I
i
⎯
-18 -45 mA
V
I
= -5V
Base-Emitter Turn-on Voltage
V
BE(ON)
⎯
-1.2 -1.6 V
V
CE
= -5V, I
C
= -400mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-1.9 -2.5
V
I
C
= -50mA, I
B
= -5mA
⎯
-5.25 -6.00
I
C
= -400mA, I
B
= -20mA
Input Resistor (Base), +/- 30%
R2
0.154
0.220
0.286
K
Ω
⎯
Pull-up Resistor (Base to V
CC
supply), +/- 30%
R1 7 10 13 K
Ω
⎯
Resistor Ratio (Input Resistor/Pullup resistor)
R1/R2
36
45
55
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
* Pulse Test: Pulse width, tp <300µs, Duty Cycle, d
≤ 0.02
Note: 6. Short duration pulse test used to minimize self-heating effect.