Diodes LMN400B01 - Manual (Page 5)

LMN400B01
Document number: DS30699 Rev. 8 - 2
5 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Pre-Biased PNP Transistor Characteristics
I , COLLECTOR CURRENT (A)
Fig. 5 V vs. I
C
CE(SAT) C
V,
C
O
LL
E
C
T
O
R
V
O
L
T
A
G
E (
V)
CE
(S
A
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
° T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (A)
Fig. 6 V vs. I
C
CE(SAT) C
V,
C
O
LL
E
C
T
O
R
V
O
L
T
A
G
E (
V)
CE
(S
A
T
)
I /I = 20
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T =-55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 7 V vs. I
C
BE(SAT) C
V
, BAS
E EM
IT
T
E
R
V
O
L
T
A
G
E (
V)
BE(
SA
T
)
I /I = 10
C B
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 8 V vs. I
C
BE(ON) C
V
, BA
SE E
M
IT
T
E
R
V
O
L
T
A
G
E (
V
)
BE
(O
N
)
I /I = 10
V = 5V
C B
CE
T = 150 C
A
°
T = 125 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = -55 C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 9 h vs. I
C
FE C
h,
D
C
C
U
R
R
EN
T
G
AI
N
FE
V = 5V
CE
T =-55 C
A
°
T = 150 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°