Littelfuse MG06400D-BN1MM Series - Manual (Page 2)

©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:08/06/13
Power Module
2
MG06400D-BN1MM
600V IGBT Family
Symbol Parameters Test Conditions Min Typ Max Unit
IGBT
V
GE(th)
Gate - Emitter Threshold Voltage V
CE
=V
GE
, I
C
=8mA 4.5 5.5 6.5 V
V
CE(sat)
Collector - Emitter
Saturation Voltage
I
c
=400A, V
GE
=15V, T
Vj
=25°C 1.95 2.45 V
I
C
=400A, V
GE
=15V, T
Vj
=125°C 2.2 V
I
CES
Collector Leakage Current
V
CE
=600V, V
GE
=0V, T
Vj
=25°C 1 mA
V
CE
=600V, V
GE
=0V, T
Vj
=125°C 2 mA
I
GES
Gate Leakage Current V
CE
=0V, V
GE
=±20V 1.2 1.2 μA
R
Gint
Intergrated Gate Resistor 2.5 Ω
Q
ge
Gate Charge V
CE
=300V, I
C
=400A , V
GE
=±15V 1.8 μC
C
ies
Input Capacitance
V
CE
=25V, V
GE
=0V, f =1MHz
18 nF
C
oes
Output Capacitance 1.8 nF
C
res
Reverse Transfer Capacitance 1.6 nF
t
d(on)
Turn - on Delay Time
V
CC
=300V
I
C
=400A
R
G
=3Ω
V
GE
=±15V
Inductive Load
T
Vj
=25°C 195 ns
T
Vj
=125°C 220 ns
t
r
Rise Time
T
Vj
=25°C 65 ns
T
Vj
=125°C 80 ns
t
d(off)
Turn - off Delay Time
T
Vj
=25°C 295 ns
T
Vj
=125°C 350 ns
t
f
Fall Time
T
Vj
=25°C 45 ns
T
Vj
=125°C 60 ns
E
on
Turn - on Energy
T
Vj
=25°C 6.5 mJ
T
Vj
=125°C 10 mJ
E
off
Turn - off Energy
T
Vj
=25°C 9.5 mJ
T
Vj
=125°C 14.5 mJ
Free-Wheeling Diode
V
F
Forward Voltage
I
F
=400A , V
GE
=0V,T
Vj
=125°C 1.25 1.6 V
I
F
=400A , V
GE
=0V, T
Vj
=125°C 1.2 V
T
rr
Reverse Recovery Time I
F
=400A , V
R
=300V 249 ns
I
RRM
Reverse Recovery Charge d
iF
/dt=-2000A/μs 214 A
Q
rr
Reverse Recovery Charge T
J
=125°C 31 μC
Electrical Characteristics (T
C
= 25°C, unless otherwise specified)