Littelfuse SM Series - Manual (Page 3)

TVS Diode Arrays
(SPA ® Diodes)
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/13
7
SM S
eries
General Purpose ESD Protection - SM05 through SM36
SM15 Electrical Characteristics (T
OP
=25ºC)
SM24 Electrical Characteristics (T
OP
=25ºC)
SM36 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 15.0 V
Reverse Voltage Drop V
R
I
R
=1mA 16.7 V
Leakage Current I
LEAK
V
R
=15V 1.0 μA
Clamp Voltage 1 V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 24.0 V
I
PP
=10A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 30.0 V
Dynamic Resistance 2 R
DYN
TLP, t
p
=100ns, I/O to GND 0.30 Ω
Peak Pulse Current
(8/20µs) 1
Ipp t
p
=8/20µs 12.0 A
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance 1
C
I/O-GND
Reverse Bias=0V, f=1MHz 100 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 75 pF
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 24.0 V
Reverse Voltage Drop V
R
I
R
=1mA 26.7 V
Leakage Current I
LEAK
V
R
=24V 1.0 μA
Clamp Voltage 1 V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 36.0 V
I
PP
=5A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 42.0 V
Dynamic Resistance 2 R
DYN
TLP, t
p
=100ns, I/O to GND 0.50 Ω
Peak Pulse Current
(8/20µs) 1
Ipp t
p
=8/20µs 7.0 A
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance 1
C
I/O-GND
Reverse Bias=0V, f=1MHz 65 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 50 pF
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤1μA 36.0 V
Reverse Voltage Drop V
R
I
R
=1mA 40.0 V
Leakage Current I
LEAK
V
R
=36V 1.0 μA
Clamp Voltage 1 V
C
I
PP
=1A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 52.0 V
I
PP
=4A, t
p
=8/20µs, Pin 1 or Pin 2 to Pin 3 62.0 V
Dynamic Resistance 2 R
DYN
TLP, t
p
=100ns, I/O to GND 0.65 Ω
Peak Pulse Current
(8/20µs) 1
Ipp t
p
=8/20µs 5.0 A
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance 1
C
I/O-GND
Reverse Bias=0V, f=1MHz 50 pF
C
I/O-I/O
Reverse Bias=0V, f=1MHz 40 pF
Note:
1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.