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Teccor, Brand thyristors, Static characteristics – Littelfuse Qxx16xHx Series User Manual

Page 3: Thermal resistances, Figure 1: definition of quadrants, Electrical characteristics, Alternistor triac

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123

Revised: 09/23/13

©2013 Littelfuse, Inc

Specifications are subject to change without notice.

Teccor

®

brand Thyristors

15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs

Qxx15xx & Qxx16xHx Series

Static Characteristics

Symbol

Test Conditions

Value

Unit

V

TM

15A Device I

T

= 21.2A t

p

= 380μs

MAX

1.60

V

16A Device I

T

= 22.6A t

p

= 380μs

I

DRM

I

RRM

V

D

= V

DRM

/ V

RRM

T

J

= 25°C

400-1000V

MAX

5

μA

T

J

= 125°C

400-800V

2

mA

T

J

= 100°C

1000V

3

Thermal Resistances

Symbol

Parameter

Value

Unit

R

T(J-C)

Junction to case (AC)

Qxx15Ry
Qxx15Ny

Qxx16RHy
Qxx16NHy

1.7

°C/W

Qxx15Ly

Qxx16LHy

2.1

R

T(J-A)

Junction to ambient

Qxx15Ry

Qxx16RHy

45

°C/W

Qxx15Ly

Qxx16LHy

50

Note: xx = voltage; y = sensitivity

Figure 2: Normalized DC Gate Trigger Current for All

Quadrants vs. Junction Temperature

+125

0.0

1.0

2.0

3.0

4.0

-65 -40

Junction Temperature (T

J

) - ºC

Ratio of I

GT

/ I

GT

(T

J

= 2

5

ºC)

-15

10

35

60

85

100

Figure 1: Definition of Quadrants

Note: Alternistors will not operate in QIV

MT2 POSITIVE

(Positive Half Cycle)

MT2 NEGATIVE

(Negative Half Cycle)

MT1

MT2

+

I

G T

REF

QII

MT1

I

G T

GATE

MT2

REF

MT1

MT2

REF

MT1

MT2

REF

QI
QIV

QIII

ALL POLARITIES ARE REFERENCED TO MT1

(

-

)

I

G T

GATE

(+)

I

G T

-

I

G T

GATE

(

-

)

I

G T

GATE

(+)

+

-

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

— Alternistor Triac

(3 Quadrants)

Symbol

Test Conditions

Quadrant

Qxx16xH2

Qxx16xH3

Qxx16xH4

Qxx16xH6

Unit

I

GT

V

D

= 12V R

L

= 60

:

*o**o***

MAX.

10

20

35

80

mA

V

GT

*o**o***

MAX.

1.3

V

V

GD

V

D

= V

DRM

R

L

= 3.3 k

: T

J

= 125°C

*o**o***

MIN.

0.2

V

I

H

I

T

= 100mA

MAX.

15

35

50

70

mA

dv/dt

V

D

= V

DRM

Gate Open T

J

= 125°C

400V

MIN.

200

350

475

925

V/μs

600V

150

250

400

850

800V

100

200

350

475

V

D

= V

DRM

Gate Open T

J

= 100°C

1000V

100

200

300

350

(dv/dt)c

(di/dt)c = 8.6 A/ms T

J

= 125°C

MIN.

2

20

25

30

V/μs

t

gt

I

G

= 2 x I

GT

PW = 15μs I

T

= 22.6 A(pk)

TYP.

3

3

3

5

μs