Littelfuse SP1006 Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
TVS Diode Arrays
(SPA ® Diodes)
General Purpose ESD Protection - SP1006 Series
TVS Diode Arrays
(SPA ® Diodes)
General Purpose ESD Protection – SP1006 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Pulse Current (t
p
=8/20μs) 5 A
T
OP
Operating Temperature –40 to 125 °C
T
STOR
Storage Temperature –55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 30s) 260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
6.0 V
Breakdown Voltage V
BR
I
R
=1mA (Pin 1 to 2) 7.8 V
Forward Voltage Drop V
F
I
R
=1mA (Pin 2 to 1) 0.8 V
Leakage Current I
LEAK
V
R
=5V 0.1 0.5 μA
Clamp Voltage 1 V
C
I
pp
=1A, t
p
=8/20µs (Pin 1 to 2) 8.3 V
I
pp
=2A, t
p
=8/20µs (Pin 1 to 2) 9.2 V
Dynamic Resistance R
DYN
(V
C2
- V
C1
) / (I
PP2
- I
PP1
) 0.9 Ω
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance 1 C
D
Reverse Bias=0V 25 pF
Reverse Bias=2.5V 15 pF
Note: 1 Parameter is guaranteed by design and/or device characterization.
Pulse Waveform Capacitance vs. Reverse Bias
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Bias Voltage (V)
Ca
paci
ta
n
ce
(pF)
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of
I PP