Rainbow Electronics TSM15N15 - Manual (Page 2)

TSM15N15
150V N-Channel Power MOSFET
2/4 Version: A12
Electrical Specifications (Ta = 25
o
C unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
150 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 10A R
DS(ON)
-- 62 75 m Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
2 3 4 V
Zero Gate Voltage Drain Current V
DS
= 120V, V
GS
= 0V I
DSS
-- -- 1 uA
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±100 nA
Dynamic
Total Gate Charge
V
DS
= 75V, I
D
= 10A,
V
GS
= 10V
Q
g
-- 20.9 --
nC Gate-Source Charge Q
gs
-- 4.4 --
Gate-Drain Charge Q
gd
-- 6.5 --
Input Capacitance
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 980 --
pF Output Capacitance C
oss
-- 127 --
Reverse Transfer Capacitance C
rss
-- 58 --
Switching
Turn-On Delay Time
V
GS
= 10V, V
DS
= 75V,
R
G
= 3 Ω
t
d(on)
-- 26 --
nS
Turn-On Rise Time t
r
-- 14 --
Turn-Off Delay Time t
d(off)
-- 73 --
Turn-Off Fall Time t
f
-- 18 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
V
GS
=0V, I
S
=10A V
SD
- 0.8 1.3 V
Reverse Recovery Time I
S
= 10A, T
J
=25
o
C
dI/dt = 500A/us
t
fr
56 nS
Reverse Recovery Charge Q
fr
151 nC
Notes:
1. Pulse Test: Pulse Width
≤ 300 µ s, Duty Cycle ≤ 2%.
2. R θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. R θ
JC
is guaranteed by design while R θ
CA
is determined by the user's board design. R θ
JA
shown below for single device operation on FR-4 in still air