Electrical performance, Electrooptical performance, Th7899m – Rainbow Electronics TH7899M User Manual
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16
TH7899M
2201A–IMAGE–02/02
Electrical
Performance
Notes:
1. Measured on VOS1 VOS2 VOS3 and VOS4.
2. Measured in each VDD pin.
Electrooptical
Performance
General measurement conditions (unless specified):
•
TC = 25°C (package temperature).
•
Vertical transfer frequency FV = 100 kHz.
•
Horizontal transfer frequency and output frequency FH = 5 MHz.
Illumination conditions:
•
3200K halogen lamp + 2 mm BG38 filter + F/3.5 aperture.
Table 3. Static And Dynamic Electrical Characteristics
Parameter
Symbol
Value
Unit
Remarks
Min
Typ
Max
DC Output Level
Vref
10.5
V
VDR = 13.5V; VS = 0V
Output Impedance
Zout
200
230
250
Ω
Output Amplifier Supply
Current
IDD
10
mA
VDD = 15V;
VDR = 13.5V; VS = 0V
Charge to Voltage Conversion
Factor
With VGL = 1V and VDR = 13.5V
With VGL = 12V and VDR = 15V
CVF1
CVF2
6.6
4.2
7
4.5
7.4
4.7
µ V/e-
µ V/e-
For Standard Mode
For Binning Mode
Image Zone To Readout
Register Frequency
FV
100
180
kHz
Without Reduction Of
Saturation Charge
Readout Register And Reset
Frequency
FH
5
20
MHz
Table 4. Electro-optical Performance Characteristics
Parameter
Symbol
Value
Unit
Remarks
Min
Typ
Max
Saturation Output Voltage
Without Binning
VSAT
1.4
1.9
V
Saturation Charge of Elementary
Pixel
Without Binning
QSAT
220
270
ke-
Saturation Charge of Readout
Registers
320
360
ke-
Saturation Charge of Summing
Gates
Φ
S
550
630
ke-
Saturation Level on the Output
Node
With VGL = 1V and VDR = 13.5V
With VGL = 12V and VDR = 15V
280
530
300
570
ke-
ke-
For Standard Mode
For Binning Mode