75v n-channel power mosfet, Electrical specifications – Rainbow Electronics TSM190N08 User Manual
Page 2

TSM190N08
75V N-Channel Power MOSFET
2/4
Version: A12
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250uA
BV
DSS
75
--
--
V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 90A
R
DS(ON)
--
3.4
4.2
m
Ω
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250uA
V
GS(TH)
2
3
4
V
Zero Gate Voltage Drain Current
V
DS
= 75V, V
GS
= 0V
I
DSS
--
--
1
uA
Gate Body Leakage
V
GS
= ±25V, V
DS
= 0V
I
GSS
--
--
±100
nA
Dynamic
Total Gate Charge
V
DS
= 30V, I
D
= 90A,
V
GS
= 10V
Q
g
--
160
--
nC
Gate-Source Charge
Q
gs
--
35
--
Gate-Drain Charge
Q
gd
--
40
--
Input Capacitance
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
8600
--
pF
Output Capacitance
C
oss
--
780
--
Reverse Transfer Capacitance
C
rss
--
300
--
Switching
Turn-On Delay Time
V
GS
= 10V, V
DS
= 30V,
R
G
= 3.3
Ω
t
d(on)
--
25
--
nS
Turn-On Rise Time
t
r
--
40
--
Turn-Off Delay Time
t
d(off)
--
85
--
Turn-Off Fall Time
t
f
--
45
--
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
V
GS
=0V, I
S
=90A
V
SD
-
0.8
1.3
V
Reverse Recovery Time
I
S
= 90A, T
J
=25
o
C
dI/dt = 100A/us
t
fr
70
nS
Reverse Recovery Charge
Q
fr
115
nC
Notes:
1. Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
2. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design. R
θ
JA
shown below for single device operation on FR-4 in still air