Tsm05n03, 30v n-channel mosfet, Electrical specifications – Rainbow Electronics TSM05N03 User Manual
Page 2

TSM05N03
30V N-Channel MOSFET
2/4
Version: A12
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
30
--
--
V
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
V
GS(TH)
1
--
3
V
Gate Body Leakage
V
GS
= ±20V, V
DS
= 0V
I
GSS
--
--
±100
nA
Zero Gate Voltage Drain Current
V
DS
= 30V, V
GS
= 0V
I
DSS
--
--
1.0
µA
On-State Drain Current
V
DS
=5V, V
GS
= 10V
I
D(ON)
5
--
--
A
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 5A
R
DS(ON)
--
46
60
m
Ω
V
GS
= 4.5V, I
D
= 3.8A
--
70
90
Forward Transconductance
V
DS
= 10V, I
D
= 5A
g
fs
--
5
--
S
Diode Forward Voltage
I
S
= 2.5A, V
GS
= 0V
V
SD
--
--
1.2
V
Dynamic
b
Total Gate Charge
V
DS
= 10V, I
D
= 5A,
V
GS
= 5V
Q
g
--
4.2
7
nC
Gate-Source Charge
Q
gs
--
1.9
--
Gate-Drain Charge
Q
gd
--
1.35
--
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
555
--
pF
Output Capacitance
C
oss
--
120
--
Reverse Transfer Capacitance
C
rss
--
60
--
Switching
b.c
Turn-On Delay Time
V
DD
= 10V, R
L
= 15
Ω
,
I
D
= 1A, V
GEN
= 10V,
R
G
= 6
Ω
t
d(on)
--
4.2
5.5
nS
Turn-On Rise Time
t
r
--
19
25
Turn-Off Delay Time
t
d(off)
--
13
17
Turn-Off Fall Time
t
f
--
9
12
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.