Rainbow Electronics Т7024 - Manual (Page 3)

3
T7024
4533A–BLURF–09/02
Figure 4. Pad Location, Thickness: 450 µm
Pad Description
1 2
4
3
5 6 7 8 9
13 14 15 16 17 18
21 20
19
10
11
12
R_SWITCH SWITCH_OUT
GND LNA_IN GND VS_LNA GND GND V3_PA_OUT
GND
GND
RAMP
V2_PA GND GND V1_PA PA_IN GND
PU RX_ON
LNA_OUT
3180 µm
1
6
0
0
µ
m
Pad diameter 180 µm
Ball diameter 200 µm
Pad Symbol Function
X-Coordinate of
Pad (1) (µm)
Y-Coordinate of
Pad (1) (µm)
1 R_SWITCH Resistor to GND sets the PIN diode current 0 400
2 SWITCH_OUT Switched current output for PIN diode 400 400
3 GND Ground 0 0
4 LNA_IN Low-noise amplifier input 400 0
5 GND Ground 800 0
6 VS_LNA Supply voltage input for low-noise amplifier 1200 0
7 GND Ground 1600 0
8 GND Ground 2000 0
9 V3_PA_OUT Inductor to power supply and matching network for
power amplifier output 2400 0
10 GND Ground 2780 150
11 GND Ground 2780 550
12 RAMP Power ramping control input 2780 950
13 V2_PA Inductor to power supply for power amplifier 2450 1200
14 GND Ground 2050 1200
15 GND Ground 1650 1200
16 V1_PA Supply voltage for power amplifier 1250 1200
17 PA_IN Power amplifier input 850 1200
18 GND Ground 400 1200
19 LNA_OUT Low-noise amplifier output 0 1200
20 RX_ON RX active high 0 800
21 PU Power-up active high 400 800
Note: 1. Relative to center of Pad 3.