Technical specifications – Delta Electronics DNT04 User Manual
Page 2
DS_DNT04SIP3A_09262007
2
TECHNICAL SPECIFICATIONS
(T
A
= 25°C, airflow rate = 300 LFM, V
in
= 2.4Vdc and 5.5Vdc, nominal Vout unless otherwise noted.)
PARAMETER
NOTES and CONDITIONS
DNT04S0A0R03NFA
Min.
Typ.
Max.
Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage (Continuous)
0
5.8
Vdc
Operating Temperature
Refer to Figure
32
for measuring point
-40
125
°C
Storage Temperature
-55
125
°C
INPUT CHARACTERISTICS
Operating Input Voltage
Vo ≦ Vin –0.5V
2.4
5.5
V
Input Under-Voltage Lockout
Turn-On Voltage Threshold
2.1
V
Turn-Off Voltage Threshold
2.0
V
Maximum Input Current
Vin=4.5V Vo=3.3V, Io=Io,max
2.5
A
No-Load Input Current
30
45
mA
Off Converter Input Current
1
mA
Inrush Transient
Vin=2.4V to 5.5V, Io=Io,min to Io,max
0.1
A
2
S
Recommended Input Fuse
TBD
A
OUTPUT CHARACTERISTICS
Output Voltage Set Point
Vin=5V, Io=Io, max
-2.0
Vo,set
+2.0
% Vo,set
Output Voltage Adjustable Range
0.7525
3.63
V
Output Voltage Regulation
Over Line
Vin=2.4V to 5.5V
0.3
% Vo,set
Over Load
Io=Io,min to Io,max
0.4
% Vo,set
Over Temperature
Ta=-40℃ to 85℃
0.4
% Vo,set
Total Output Voltage Range
Over sample load, line and temperature
-3.0
+3.0
% Vo,set
Output Voltage Ripple and Noise
5Hz to 20MHz bandwidth
Peak-to-Peak
Full Load, 1µF ceramic, 10µF tantalum
25
50
mV
RMS
Full Load, 1µF ceramic, 10µF tantalum
10
15
mV
Output Current Range
0
3
A
Output Voltage Over-shoot at Start-up
5 %
Vo,set
Output DC Current-Limit Inception
220
% Io
Output Short-Circuit Current (Hiccup Mode)
Io,s/c
3
Adc (rms)
DYNAMIC CHARACTERISTICS
Dynamic Load Response
10µF Tantalum & 1µF Ceramic load cap, 2.5A/µs
Positive Step Change in Output Current
50% Io, max to 100% Io, max
220
mV
Negative Step Change in Output Current
100% Io, max to 50% Io, max
220
mV
Setting Time to 10% of Peak Devitation
25
µs
Turn-On Transient
Io=Io.max
Start-Up Time, From On/Off Control
Von/off, Vo=10% of Vo,set
7
ms
Start-Up Time, From Input
Vin=Vin,min, Vo=10% of Vo,set
7
ms
Maximum Output Startup Capacitive Load
Full load; ESR ≧1mΩ
1000 µF
Full load; ESR ≧10mΩ
3000
µF
EFFICIENCY
Vo=3.3V
Vin=5V, 100% Load
94.0
%
Vo=2.5V
Vin=5V, 100% Load
92.5
%
Vo=1.8V
Vin=5V, 100% Load
90.0
%
Vo=1.5V
Vin=5V, 100% Load
88.5
%
Vo=1.2V
Vin=5V, 100% Load
87.0
%
Vo=0.75V
Vin=5V, 100% Load
81.5
%
FEATURE CHARACTERISTICS
Switching Frequency
300
kHz
ON/OFF Control, (Negative logic)
Logic Low Voltage
Module On, Von/off
-0.2
0.3
V
Logic High Voltage
Module Off, Von/off
2.5
Vin.max
V
Logic Low Current
Module On, Ion/off
10
µA
Logic High Current
Module Off, Ion/off
0.2
1
mA
GENERAL SPECIFICATIONS
MTBF
Io=100% of Io, max; Ta=25°C
TBD
M hours
Weight
2.3
grams