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Document history page – Cypress CY14E256L User Manual

Page 17

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CY14E256L

Document Number: 001-06968 Rev. *F

Page 17 of 18

Document History Page

Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM
Document Number: 001-06968

Rev.

ECN No.

Submission

Date

Orig. of

Change

Description of Change

**

427789

See ECN

TUP

New data sheet

*A

437321

See ECN

TUP

Show data sheet on external Web

*B

472053

See ECN

TUP

Updated Part Numbering Nomenclature and Ordering Information

*C

503290

See ECN

PCI

Changed from “Advance” to “Preliminary”
Changed the term “Unlimited” to “Infinite”
Changed I

CC3

value from 10mA to 15mA

Removed Industrial Grade mention
Removed 35 ns speed bin
Removed I

CC1

values from the DC table for 35 ns Industrial Grade

Corrected V

IL

min specification from (V

CC

- 0.5) to (V

SS

- 0.5)

Removed all references pertaining to OE controlled Software STORE and
RECALL operation
Changed the address locations of the software STORE/RECALL com-
mand
Updated Part Nomenclature Table and Ordering Information Table

*D

1349963

See ECN

UHA/SFV

Changed from “Preliminary” to “Final.” Updated AC Test Conditions
Updated Ordering Information Table

*E

2427986

See ECN

GVCH

Move to external web

*F

2606744

02/19/09

GVCH/PYRS

Updated Feature Section
Added 35 ns access speed specs
Added CDIP package
Removed HSB ganging feature
Added footnote 5
Updates all the notes
Added Best practices
Added Industrial specs
Changed Icc3 from 15 mA to 10 mA
Added I

SB1

spec

Added parameter V

BL

Changed V

IH

test conditions from -2 and 4 to -4 and 8mA

Added footnote 6 and 7
Added t

VSBL

and V

RESET

parameter to Autostore or Power-up Recall table

Added Thermal resistance values
Changed parameter t

AS

to t

SA

Renamed t

GLAX

to t

HACE

Renamed t

RESTORE

to t

DHSB

Updated Figure 13

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