Thermal resistance, Ac test loads and waveforms, Data retention characteristics – Cypress CY62157EV18 User Manual
Page 4: Data retention waveform
CY62157EV18 MoBL
®
Document #: 38-05490 Rev. *D
Page 4 of 12
Thermal Resistance
Parameter
Description
Test Conditions
BGA
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
72
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
8.86
°C/W
AC Test Loads and Waveforms
Parameters
Value
Unit
R1
13500
Ω
R2
10800
Ω
R
TH
6000
Ω
V
TH
0.80
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
1.0
V
I
CCDR
Data Retention Current
V
CC
= V
DR
, CE
1
> V
CC
– 0.2V,
CE
2
< 0.2V,V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
1
3
µA
t
CDR
Chip Deselect to Data Retention Time
0
ns
t
R
Operation Recovery Time
t
RC
ns
Data Retention Waveform
3V
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to:
THEVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
V
CC(min)
t
CDR
V
DR
> 1.0V
DATA RETENTION MODE
t
R
V
CC(min)
CE
1
or
V
CC
BHE.BLE
CE
2
or
Notes
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
µs or stable at V
CC(min)
> 100
µs.
10. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.