Cypress CY62157EV18 - Manual (Page 3)

CY62157EV18 MoBL
®
Document #: 38-05490 Rev. *D Page 3 of 12
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential...............................–0.2V to 2.45V (V
CCmax
+ 0.2V)
DC Voltage Applied to Outputs
in High-Z State
[4, 5]
..............–0.2V to 2.45V (V
CCmax
+ 0.2V)
DC Input Voltage [4, 5] ......... –0.2V to 2.45V (V
CCmax
+ 0.2V)
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(in accordance with MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[6]
CY62157EV18LL Industrial –40°C to +85°C 1.65V to 2.25V
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions
55 ns
Unit
Min Typ [2] Max
V
OH
Output HIGH Voltage I
OH
= –0.1 mA V
CC
= 1.65V 1.4 V
V
OL
Output LOW Voltage I
OL
= 0.1 mA V
CC
= 1.65V 0.2 V
V
IH
Input HIGH Voltage V
CC
= 1.65V to 2.25V 1.4 V
CC
+ 0.2V V
V
IL
Input LOW Voltage V
CC
= 1.65V to 2.25V –0.2 0.4 V
I
IX
Input Leakage
Current GND < V
I
< V
CC
–1 +1 µA
I
OZ
Output Leakage
Current GND < V
O
< V
CC
, Output Disabled –1 +1 µA
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
18 25 mA
f = 1 MHz 1.8 3 mA
I
SB1
Automatic CEPower Down
Current–CMOS Inputs CE
1
> V
CC
−0.2V or CE
2
< 0.2V
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE, WE, BHE and BLE), V
CC
= V
CC(max)
.
2 8 µA
I
SB2
[7] Automatic CE Power Down
Current–CMOS Inputs CE
1
> V
CC
– 0.2V or CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
.
2 8 µA
Capacitance [8]
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
6. Full Device AC operation assumes a 100 µs ramp time from 0 to V
CC
(min) and 200 µs wait time after V
CC
stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB2
spec. Other inputs can be left floating.
8. Tested initially and after any design or process changes that may affect these parameters.
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