Document history page – Cypress CY62158E User Manual
Page 10
Document #: 38-05684 Rev. *D
Revised June 16, 2008
Page 10 of 10
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CY62158E MoBL
®
© Cypress Semiconductor Corporation, 2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any
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Document History Page
Document Title: CY62158E MoBL
®
8-Mbit (1M x 8) Static RAM
Document Number: 38-05684
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
270350
See ECN
PCI
New Data Sheet
*A
291271
See ECN
SYT
Converted from Advance Information to Preliminary
Changed input pulse level from V
CC
to 3V in the AC Test Loads and Waveforms
Modified footnote #9 to include timing reference level of 1.5V and input pulse
level of 3V
*B
1462592
See ECN
VKN/AESA Converted from preliminary to final
Removed 35 ns speed bin
Removed “L” parts
Removed 48-Ball VFBGA package
Changed I
CC(max)
spec from 2.3 mA to 3 mA at f=1 MHz
Changed I
CC(typ)
spec from 16 mA to 18 mA at f=f
MAX
Changed I
CC(max)
spec from 28 mA to 25 mA at f=f
MAX
Changed I
SB1(typ)
and I
SB2(typ)
spec from 0.9
μA to 2 μA
Changed I
SB1(max)
and I
SB2(max)
spec from 4.5
μA to 8 μA
Changed I
CCDR(max)
spec from 4.5
μA to 8 μA
Changed t
LZOE
spec from 3 ns to 5 ns
Changed t
LZCE
spec from 6 ns to 10 ns
Changed t
HZCE
spec from 22 ns to 18 ns
Changed t
PWE
spec from 30 ns to 35 ns
Changed t
SD
spec from 22 ns to 25 ns
Changed t
LZWE
spec from 6 ns to 10 ns
Added footnote# 6 related to I
SB2
and I
CCDR
Updated Ordering information table
*C
2428708
See ECN
VKN/PYRS Corrected typo in the Ordering Information table
*D
2516494
See ECN
PYRS
Corrected ECN number