Capacitance, Thermal resistance, Ac test loads and waveforms – Cypress CY62147DV18 User Manual
Page 4: Data retention characteristics
CY62147DV18
MoBL2™
Document #: 38-05343 Rev. *B
Page 4 of 11
I
SB1
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > V
CC
−0.2V,
V
IN
>V
CC
–0.2V,
V
IN
<0.2V); f = f
MAX
(Address and Data
Only), f = 0 (OE,
WE, BHE and BLE)
V
CC(max)
=1.95V L
0.5
12
0.5
12
µA
LL
8
8
V
CC(max)
=2.25V L
0.5
18
0.5
18
LL
12
12
I
SB2
Automatic CE
Power-down
Current —
CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V, f = 0
V
CC(max)
=1.95V L
0.5
12
0.5
12
µA
LL
8
8
V
CC(max)
=2.25V L
0.5
18
0.5
18
LL
12
12
Capacitance
for all Packages
[8]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10
pF
C
OUT
Output Capacitance
10
pF
Thermal Resistance
Parameter
Description
Test Conditions
BGA
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
75
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
[8]
10
°C/W
AC Test Loads and Waveforms
Parameters
1.80V
Unit
R1
13500
Ω
R2
10800
Ω
R
TH
6000
Ω
V
TH
0.80
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.
[7]
Max.
Unit
V
DR
V
CC
for Data Retention
1.0
V
I
CCDR
Data Retention Current
V
CC
= 1.0V CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
L
6
µA
LL
4
t
CDR
[8]
Chip Deselect to Data Retention Time
0
ns
t
R
Operation Recovery Time
t
RC
ns
Notes:
8.
Tested initially and after any design or process changes that may affect these parameters.
Electrical Characteristics Over the Operating Range
(continued)
Parameter
Description
Test Conditions
CY62147DV18-55
CY62147DV18-70
Unit
Min. Typ.
[7]
Max.
Min. Typ.
[7]
Max.
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to:
THÉ
VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1