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Switching characteristics – Cypress CY62167EV18 User Manual

Page 5

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CY62167EV18 MoBL

®

Document #: 38-05447 Rev. *G

Page 5 of 13

Switching Characteristics

Over the Operating Range

[13, 14]

Parameter

Description

55 ns

Unit

Min

Max

Read Cycle

t

RC

Read Cycle Time

55

ns

t

AA

Address to Data Valid

55

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE

1

LOW and CE

2

HIGH to Data Valid

55

ns

t

DOE

OE LOW to Data Valid

25

ns

t

LZOE

OE LOW to Low-Z

[15]

5

ns

t

HZOE

OE HIGH to High-Z

[15, 16]

18

ns

t

LZCE

CE

1

LOW and CE

2

HIGH to Low-Z

[15]

10

ns

t

HZCE

CE

1

HIGH and CE

2

LOW to High-Z

[15, 16]

18

ns

t

PU

CE

1

LOW and CE

2

HIGH to Power Up

0

ns

t

PD

CE

1

HIGH and CE

2

LOW to Power Down

55

ns

t

DBE

BLE/BHE LOW to Data Valid

55

ns

t

LZBE

BLE/BHE LOW to Low-Z

[15]

10

ns

t

HZBE

BLE/BHE HIGH to High-Z

[15, 16]

18

ns

Write Cycle

[17]

t

WC

Write Cycle Time

55

ns

t

SCE

CE

1

LOW and CE

2

HIGH

to Write End

40

ns

t

AW

Address Setup to Write End

40

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Setup to Write Start

0

ns

t

PWE

WE Pulse Width

40

ns

t

BW

BLE/BHE LOW to Write End

40

ns

t

SD

Data Setup to Write End

25

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High-Z

[15, 16]

20

ns

t

LZWE

WE HIGH to Low-Z

[15]

10

ns

Notes

13. Test conditions for all parameters other than tri-state parameters are based on signal transition time of 1V/ns, timing reference levels of V

CC(typ)

/2, input pulse levels

of 0 to V

CC(typ)

, and output loading of the specified I

OL

/I

OH

as shown in

AC Test Loads and Waveforms on page 4

.

14. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See

application note AN13842

for further clarification.

15. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZBE

is less than t

LZBE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any given

device.

16. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

transitions are measured when the output enters a high impedance state.

17. The internal memory write time is defined by the overlap of WE, CE

1

= V

IL

, BHE and/or BLE = V

IL

, and CE

2

= V

IH

. All signals must be ACTIVE to initiate a write and

any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

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