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Maximum ratings, Operating range, Electrical characteristics – Cypress CY62167EV18 User Manual

Page 3: Capacitance

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CY62167EV18 MoBL

®

Document #: 38-05447 Rev. *G

Page 3 of 13

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the

device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with

Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground

Potential .......................... –0.2V to 2.45V (V

CC

(max)

+ 0.2V)

DC Voltage Applied to Outputs

in High Z State

[6, 7]

........... –0.2V to 2.45V (V

CC

(max)

+ 0.2V)

DC Input Voltage

[6, 7]

....... –0.2V to 2.45V (V

CC

(max)

+ 0.2V)

Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage........................................... >2001V

(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA

Operating Range

Device

Range

Ambient

Temperature

V

CC

[8]

CY62167EV18LL Industrial –40°C to +85°C 1.65V to 2.25V

Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

55 ns

Unit

Min

Typ

[4]

Max

V

OH

Output HIGH Voltage

I

OH

= –0.1 mA

1.4

V

V

OL

Output LOW Voltage

I

OL

= 0.1 mA

0.2

V

V

IH

Input HIGH Voltage

V

CC

= 1.65V to 2.25V

1.4

V

CC

+ 0.2V

V

V

IL

Input LOW Voltage

V

CC

= 1.65V to 2.25V

–0.2

0.4

V

I

IX

Input Leakage Current

GND < V

I

< V

CC

–1

+1

μA

I

OZ

Output Leakage Current

GND < V

O

< V

CC

, Output Disabled

–1

+1

μA

I

CC

V

CC

Operating Supply

Current

f = f

max

= 1/t

RC

V

CC

= V

CC

(max)

I

OUT

= 0 mA

CMOS levels

25

30

mA

f = 1 MHz

2.2

4.0

mA

I

SB1

Automatic CE Power Down
Current – CMOS Inputs

CE

1

> V

CC

– 0.2V or CE

2

< 0.2V

V

IN

> V

CC

– 0.2V, V

IN

< 0.2V)

f = f

max

(Address and Data Only),

f = 0 (OE, WE, BHE and BLE),
V

CC

= V

CC

(max)

1.5

12

μA

I

SB2

[9]

Automatic CE Power Down
Current – CMOS Inputs

CE

1

> V

CC

– 0.2V or CE

2

< 0.2V,

V

IN

> V

CC

– 0.2V or V

IN

< 0.2V,

f = 0, V

CC

= V

CC(max)

1.5

12

μA

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter

Description

Test Conditions

Max

Unit

C

IN

Input Capacitance

T

A

= 25°C, f = 1 MHz,

V

CC

= V

CC(typ)

10

pF

C

OUT

Output Capacitance

10

pF

Notes

6. V

IL

(min) = –2.0V for pulse durations less than 20 ns.

7. V

IH

(max) = V

CC

+ 0.75V for pulse durations less than 20 ns.

8. Full Device AC operation is based on a 100

μs ramp time from 0 to V

CC

(min) and 200

μs wait time after V

CC

stabilization.

9. Only chip enables (CE

1

and CE

2

), and byte enables (BHE and BLE) must be tied to CMOS levels to meet the I

SB2

/ I

CCDR

spec. Other inputs can be left floating.

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