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Switching characteristics – Cypress CY62157CV33 User Manual

Page 6

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CY62157CV30/33

Document #: 38-05014 Rev. *F

Page 6 of 13

Switching Characteristics

Over the Operating Range

[10]

Parameter

Description

70 ns

Unit

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

70

ns

t

AA

Address to Data Valid

70

ns

t

OHA

Data Hold from Address Change

10

ns

t

ACE

CE

1

LOW and CE

2

HIGH to Data Valid

70

ns

t

DOE

OE LOW to Data Valid

35

ns

t

LZOE

OE LOW to Low-Z

[11]

5

ns

t

HZOE

OE HIGH to High-Z

[11, 12]

25

ns

t

LZCE

CE

1

LOW and CE

2

HIGH to Low-Z

[11]

10

ns

t

HZCE

CE

1

HIGH or CE

2

LOW to High-Z

[11, 12]

25

ns

t

PU

CE

1

LOW and CE

2

HIGH to Power-up

0

ns

t

PD

CE

1

HIGH or CE

2

LOW to Power-down

70

ns

t

DBE

BHE/BLE LOW to Data Valid

70

ns

t

LZBE

[11]

BHE/BLE LOW to Low-Z

[13]

5

ns

t

HZBE

BHE/BLE HIGH to High-Z

[11, 12]

25

ns

Write Cycle

[14]

t

WC

Write Cycle Time

70

ns

t

SCE

CE

1

LOW and CE

2

HIGH to Write End

60

ns

t

AW

Address Set-up to Write End

60

ns

t

HA

Address Hold from Write End

0

ns

t

SA

Address Set-up to Write Start

0

ns

t

PWE

WE Pulse Width

50

ns

t

BW

BHE/BLE Pulse Width

60

ns

t

SD

Data Set-up to Write End

30

ns

t

HD

Data Hold from Write End

0

ns

t

HZWE

WE LOW to High-Z

[11, 12]

25

ns

t

LZWE

WE HIGH to Low-Z

[11]

5

ns

Notes:

10. Test conditions assume signal transition time of 5 ns or less, timing reference levels of V

CC(typ.)

/2, input pulse levels of 0 to V

CC(typ.)

, and output loading of the

specified I

OL

/I

OH

and 30-pF load capacitance.

11. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZBE

is less than t

LZBE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any

given device.

12. t

HZOE

, t

HZCE

, t

HZBE

, and t

HZWE

transitions are measured when the outputs enter a high-impedance state.

13. When both byte enables are toggled together this value is 10 ns.
14. The internal Write time of the memory is defined by the overlap of WE, CE

1

= V

IL

, BHE and/or BLE = V

IL

, CE

2

= V

IH

. All signals must be ACTIVE to initiate a

Write and any of these signals can terminate a Write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal
that terminates the Write.

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