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Switching characteristics, Switching waveforms – Cypress 256K (32K x 8) CY62256 User Manual

Page 4

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CY62256

Document #: 38-05248 Rev. *B

Page 4 of 11

Switching Characteristics

Over the Operating Range

[6]

Parameter

Description

CY62256

55

CY62256

70

Unit

Min.

Max.

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

55

70

ns

t

AA

Address to Data Valid

55

70

ns

t

OHA

Data Hold from Address Change

5

5

ns

t

ACE

CE LOW to Data Valid

55

70

ns

t

DOE

OE LOW to Data Valid

25

35

ns

t

LZOE

OE LOW to Low-Z

[7]

5

5

ns

t

HZOE

OE HIGH to High-Z

[7, 8]

20

25

ns

t

LZCE

CE LOW to Low-Z

[7]

5

5

ns

t

HZCE

CE HIGH to High-Z

[7, 8]

20

25

ns

t

PU

CE LOW to Power-up

0

0

ns

t

PD

CE HIGH to Power-down

55

70

ns

Write Cycle

[9, 10]

t

WC

Write Cycle Time

55

70

ns

t

SCE

CE LOW to Write End

45

60

ns

t

AW

Address Set-up to Write End

45

60

ns

t

HA

Address Hold from Write End

0

0

ns

t

SA

Address Set-up to Write Start

0

0

ns

t

PWE

WE Pulse Width

40

50

ns

t

SD

Data Set-up to Write End

25

30

ns

t

HD

Data Hold from Write End

0

0

ns

t

HZWE

WE LOW to High-Z

[7, 8]

20

25

ns

t

LZWE

WE HIGH to Low-Z

[7]

5

5

ns

Switching Waveforms

Notes:

6.

Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I

OL

/I

OH

and 100-pF load capacitance.

7.

At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any given device.

8.

t

HZOE

, t

HZCE

, and t

HZWE

are specified with C

L

= 5 pF as in (b) of AC Test Loads. Transition is measured

±

500 mV from steady-state voltage.

9.

The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a Write and either signal can terminate
a Write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the Write.

10. The minimum Write cycle time for Write cycle #3 (WE controlled, OE LOW) is the sum of t

HZWE

and t

SD

11. Device is continuously selected. OE, CE = V

IL

.

12. WE is HIGH for Read cycle.

ADDRESS

DATA OUT

PREVIOUS DATA VALID

DATA VALID

t

RC

t

AA

t

OHA

Read Cycle No. 1

[11, 12]