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Switching characteristics, Data retention waveform – Cypress CY62128EV30 User Manual

Page 5

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CY62128EV30

Document #: 38-05579 Rev. *D

Page 5 of 11

Data Retention Waveform

[10]

Switching Characteristics

(Over the Operating Range)

[10, 11]

Parameter

Description

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

Min

Max

Min

Max

Read Cycle

t

RC

Read Cycle Time

45

55

ns

t

AA

Address to Data Valid

45

55

ns

t

OHA

Data Hold from Address Change

10

10

ns

t

ACE

CE LOW to Data Valid

45

55

ns

t

DOE

OE LOW to Data Valid

22

25

ns

t

LZOE

OE LOW to Low Z

[12]

5

5

ns

t

HZOE

OE HIGH to High Z

[12,13]

18

20

ns

t

LZCE

CE LOW to Low Z

[12]

10

10

ns

t

HZCE

CE HIGH to High Z

[12, 13]

18

20

ns

t

PU

CE LOW to Power Up

0

0

ns

t

PD

CE HIGH to Power Up

45

55

ns

Write Cycle

[14]

t

WC

Write Cycle Time

45

55

ns

t

SCE

CE LOW to Write End

35

40

ns

t

AW

Address Setup to Write End

35

40

ns

t

HA

Address Hold from Write End

0

0

ns

t

SA

Address Setup to Write Start

0

0

ns

t

PWE

WE Pulse Width

35

40

ns

t

SD

Data Setup to Write End

25

25

ns

t

HD

Data Hold from Write End

0

0

ns

t

HZWE

WE LOW to High Z

[12, 13]

18

20

ns

t

LZWE

WE HIGH to Low Z

[12]

10

10

ns

V

CC(min)

V

CC(min)

t

CDR

V

DR

> 1.5V

DATA RETENTION MODE

t

R

V

CC

CE

Notes

10. CE is the logical combination of CE

1

and CE

2

. When CE

1

is LOW and CE

2

is HIGH, CE is LOW; when CE

1

is HIGH or CE

2

is LOW, CE is HIGH.

11. Test Conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of V

CC(typ)

/2, input

pulse levels of 0 to V

CC(typ)

, and output loading of the specified I

OL

/I

OH

as shown in the

“AC Test Loads and Waveforms”

on page 4.

12. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any given device.

13. t

HZOE

, t

HZCE

, and t

HZWE

transitions are measured when the output enter a high impedance state.

14. The internal write time of the memory is defined by the overlap of WE, CE = V

IL

. All signals must be ACTIVE to initiate a write and any of these signals can

terminate a write by going INACTIVE. The data input setup and hold timing should be referenced to the edge of the signal that terminates the write.

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