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Maximum ratings, Operating range, Electrical characteristics – Cypress CY62128EV30 User Manual

Page 3

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CY62128EV30

Document #: 38-05579 Rev. *D

Page 3 of 11

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.

Storage Temperature .................................. –65°C to +150°C

Ambient Temperature with
Power Applied ............................................ –55°C to +125°C

Supply Voltage to Ground
Potential..........................................–0.3V to V

CC(max)

+ 0.3V

DC Voltage Applied to Outputs
in High-Z State

[4, 5]

.........................–0.3V to V

CC(max)

+ 0.3V

DC Input Voltage

[4,5]

.......................–0.3V to V

CC(max)

+ 0.3V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)

Latch up Current..................................................... > 200 mA

Operating Range

Device

Range

Ambient

Temperature

V

CC

[6]

CY62128EV30LL

Ind’l/Auto-A

–40°C to +85°C

2.2V to

3.6V

Auto-E

–40°C to +125°C

Electrical Characteristics

(Over the Operating Range)

Parameter

Description

Test Conditions

45 ns (Ind’l/Auto-A)

55 ns (Auto-E)

Unit

Min

Typ

[3]

Max

Min

Typ

[3]

Max

V

OH

Output HIGH Voltage

I

OH

= –0.1 mA

2.0

2.0

V

I

OH

= –1.0 mA, V

CC

> 2.70V

2.4

2.4

V

V

OL

Output LOW Voltage

I

OL

= 0.1 mA

0.4

0.4

V

I

OL

= 2.1 mA, V

CC

> 2.70V

0.4

0.4

V

V

IH

Input HIGH Voltage

V

CC

= 2.2V to 2.7V

1.8

V

CC

+

0.3V

1.8

V

CC

+

0.3V

V

V

CC

= 2.7V to 3.6V

2.2

V

CC

+

0.3V

2.2

V

CC

+

0.3V

V

V

IL

Input LOW Voltage

V

CC

= 2.2V to 2.7V

–0.3

0.6

–0.3

0.6

V

V

CC

= 2.7V to 3.6V

–0.3

0.8

–0.3

0.8

V

I

IX

Input Leakage Current

GND < V

I

< V

CC

–1

+1

–4

+4

μA

I

OZ

Output Leakage Current

GND < V

O

< V

CC

, Output Disabled

–1

+1

–4

+4

μA

I

CC

V

CC

Operating Supply

Current

f = f

max

= 1/t

RC

V

CC

= V

CCmax

I

OUT

= 0 mA

CMOS levels

11

16

11

35

mA

f = 1 MHz

1.3

2.0

1.3

4.0

mA

I

SB1

Automatic CE
Power down
Current — CMOS Inputs

CE

1

> V

CC

−0.2V, CE

2

< 0.2V

V

IN

> V

CC

–0.2V, V

IN

< 0.2V)

f = f

max

(Address and Data Only),

f = 0 (OE and WE), V

CC

= 3.60V

1

4

1

35

μA

I

SB2

[7]

Automatic CE
Power down
Current — CMOS Inputs

CE

1

> V

CC

– 0.2V, CE

2

< 0.2V

V

IN

> V

CC

– 0.2V or V

IN

< 0.2V,

f = 0, V

CC

= 3.60V

1

4

1

30

μA

Notes

4. V

IL(min)

= –2.0V for pulse durations less than 20 ns.

5. V

IH(max)

= V

CC

+0.75V for pulse durations less than 20 ns.

6. Full device AC operation assumes a 100

μs ramp time from 0 to V

CC

(min) and 200

μs wait time after V

CC

stabilization.

7. Only chip enables (CE

1

and CE

2

) must be at CMOS level to meet the I

SB2

/ I

CCDR

spec. Other inputs can be left floating.

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