beautypg.com

Cypress CY62128EV30 User Manual

Features, Functional description, Logic block diagram

background image

CY62128EV30

MoBL® 1 Mbit (128K x 8) Static RAM

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05579 Rev. *D

Revised March 28, 2008

Features

Very high speed: 45 ns

Temperature ranges:
• Industrial: –40°C to +85°C
• Automotive-A: –40°C to +85°C
• Automotive-E: –40°C to +125°C

Wide voltage range: 2.20V – 3.60V

Pin compatible with CY62128DV30

Ultra low standby power

Typical standby current: 1

μA

Maximum standby current: 4

μA

Ultra low active power

Typical active current: 1.3 mA @ f = 1 MHz

Easy memory expansion with CE

1

, CE

2

and OE features

Automatic power down when deselected

CMOS for optimum speed and power

Offered in Pb-free 32-pin SOIC, 32-pin TSOP I, and 32-pin
STSOP packages

Functional Description

The CY62128EV30

[1]

is a high performance CMOS static RAM

module organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL

®

) in portable

applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device into standby mode reduces power consumption by more
than 99% when deselected (CE

1

HIGH or CE

2

LOW). The eight

input and output pins (IO

0

through IO

7

) are placed in a high

impedance state when the device is deselected (CE

1

HIGH or

CE

2

LOW), the outputs are disabled (OE HIGH), or a write

operation is in progress (CE

1

LOW and CE

2

HIGH and WE

LOW).

To write to the device, take Chip Enable (CE

1

LOW and CE

2

HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO
pins is then written into the location specified on the Address pin
(A

0

through A

16

).

To read from the device, take Chip Enable (CE

1

LOW and CE

2

HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the IO pins.

A0

IO0

IO7

IO1
IO2
IO3
IO4
IO5
IO6

A1

A2

A3

A4

A5

A6

A7

A8

A9

A

12

SENSE AMPS

POWER

DOWN

WE

OE

A

13

A

14

A

15

A

16

ROW DECODER

COLUMN DECODER

128K x 8

ARRAY

INPUT BUFFER

A10

A11

CE1

CE2

Logic Block Diagram

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at

http://www.cypress.com.

[+] Feedback