Document history page – Cypress CY62138EV30 User Manual
Page 9
CY62138EV30
MoBL
®
Document #: 38-05577 Rev. *A
Page 9 of 9
Document History Page
Document Title: CY62138EV30 2-Mbit (256K x 8) MoBL
®
Static RAM
Document Number: 38-05577
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
237432
See ECN
AJU
New data sheet
*A
427817
See ECN
NXR
Removed 35 ns Speed Bin
Removed “L” version
Removed 32-pin TSOPII package from product Offering.
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Moved Product Portfolio from Page # 3 to Page #2.
Changed I
CC
(Max) value from 2 mA to 2.5 mA and I
CC
(Typ) value from
1.5 mA to 2 mA at f = 1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f = f
max
=1/t
RC
Changed I
SB1
and I
SB2
Typ. values from 0.7
µA to 1 µA and Max. values from
2.5
µA to 7 µA.
Changed V
CC
stabilization time in footnote #7 from 100
µs to 200 µs
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed V
DR
from 1.5V to 1V on Page# 4.
Changed I
CCDR
from 1
µA to 3 µA in the Data Retention Characteristics table
on Page # 4.
Corected t
R
in Data Retention Characteristics from 100
µs to t
RC
ns
Changed t
OHA
,
t
LZCE
,
t
LZWE
from 6 ns to 10 ns
Changed t
HZOE
,
t
HZCE
,
t
HZWE
from 15 ns to 18 ns
Changed t
LZOE
from 3 ns to 5 ns
Changed t
SCE
and t
AW
from 40 ns to 35 ns
Changed t
SD
from 20 ns to 25 ns
Changed t
PWE
from 25 ns to 35 ns
Updated the Ordering Information table and replaced Package Name
column with Package Diagram.