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Maximum ratings, Operating range, Electrical characteristics – Cypress CY62157ESL User Manual

Page 3

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CY62157ESL MoBL

®

Document #: 001-43141 Rev. **

Page 3 of 12

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.

Storage Temperature .................................. –65°C to +150°C

Ambient Temperature with
Power Applied ............................................ –55°C to +125°C

Supply Voltage to Ground Potential..................–0.5V to 6.0V

DC Voltage Applied to Outputs
in High-Z State

[3, 4]

...........................................–0.5V to 6.0V

DC Input Voltage

[3, 4]

........................................–0.5V to 6.0V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)

Latch up Current...................................................... >200 mA

Operating Range

Device

Range

Ambient

Temperature

V

CC

[5]

CY62157ESL

Industrial

–40°C to +85°C 2.2V–3.6V,

and

4.5V–5.5V

Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

45 ns

Unit

Min

Typ

[2]

Max

V

OH

Output HIGH Voltage

2.2 < V

CC

< 2.7

I

OH

= –0.1 mA

2.0

V

2.7 < V

CC

< 3.6

I

OH

= –1.0 mA

2.4

4.5 < V

CC

< 5.5

I

OH

= –1.0 mA

2.4

V

OL

Output LOW Voltage

2.2 < V

CC

< 2.7

I

OL

= 0.1 mA

0.4

V

2.7 < V

CC

< 3.6

I

OL

= 2.1mA

0.4

4.5 < V

CC

< 5.5

I

OL

= 2.1mA

0.4

V

IH

Input HIGH Voltage

2.2 < V

CC

< 2.7

1.8

V

CC

+ 0.3

V

2.7 < V

CC

< 3.6

2.2

V

CC

+ 0.3

4.5 < V

CC

< 5.5

2.2

V

CC

+ 0.5

V

IL

Input LOW Voltage

2.2 < V

CC

< 2.7

–0.3

0.6

V

2.7 < V

CC

< 3.6

–0.3

0.8

4.5 < V

CC

< 5.5

–0.5

0.8

I

IX

Input Leakage Current

GND < V

I

< V

CC

–1

+1

μA

I

OZ

Output Leakage Current GND < V

O

< V

CC

, Output Disabled

–1

+1

μA

I

CC

V

CC

Operating Supply

Current

f = f

max

= 1/t

RC

V

CC

= V

CCmax

I

OUT

= 0 mA,

CMOS levels

18

25

mA

f = 1 MHz

1.8

3

I

SB1

Automatic CE Power
down Current — CMOS
Inputs

CE > V

CC

− 0.2V, V

IN

> V

CC

– 0.2V or V

IN

< 0.2V,

f = f

max

(Address and Data Only),

f = 0 (OE, BHE, BLE and WE), V

CC

= V

CC(max)

2

8

μA

I

SB2

Automatic CE Power
down Current — CMOS
Inputs

CE > V

CC

– 0.2V, V

IN

> V

CC

– 0.2V or V

IN

< 0.2V,

f = 0, V

CC

= V

CC(max)

2

8

μA

Notes

3. V

IL

(min) = –2.0V for pulse durations less than 20 ns.

4. V

IH

(max) = V

CC

+ 0.75V for pulse durations less than 20 ns.

5. Full Device AC operation assumes a 100

μs ramp time from 0 to V

CC

(min) and 200

μs wait time after V

CC

stabilization.

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