Sgtos, S diodes, Bridge module – Silicon Power PSM 80 BA A10_Power Semiconductor Half-Bridge Module User Manual
Page 2
PSM80BA10
Power Semiconductor Half-Bridge Module
SGTOs
(TJ=25oC unless otherwise specified)
Performance Ratings
Measurements
Parameters
SymbolMin. Typ.
Max. Units
Test Conditions
V
DRM
4
kV
60 Hz, 3 pulse, TJ=140oC
dv/dt
>
1
kV/us
I
D
50
100
uA
V
GK
=0V, V
AK
=3.5kV, TJ=25oC
10
uA
TJ=140oC, Note: 3 & 4
Peak Anode Current (8mSec)
P at 8ms
5
kA
dI/dt
60
kA/us
Turn-on Delay Time
t
D(ON)
100
ns
Ls=8.2nH
Turn-off Delay Time
t
D(OFF)
TBD
C=0.15 uF Capacitor discharge
V
T
1.1
I
T
=700A, TJ=25oC
1.2
V
Ig = 500 mA, TJ=140oC
Operating Case Temp.
Tc
100
o
C
Thermal Resistance
R
JC
0.042
o
C/W
S Diodes
(TJ=25oC unless otherwise specified)
Peak Off-State Forward Voltage
Off-State rate of Change of
Voltage Immunity
Anode-Cathode Off-State
Forward Leakage Current
Pk Rate of Change of Current
(measured)
Anode-Cathode On-State
Voltage
Bridge Module
05/28/09)
S Diodes
(TJ=25oC unless otherwise specified)
Performance Ratings
Measurements
Parameters
SymbolMin. Typ.
Max. Units
Test Conditions
V
RRM
4
kV
dv/dt
>
1
kV/us
RMS Forward Current
I
F(AVG)
700
A
T
c
= 140
o
C
Forward Voltage
V
F
1.1
I
F
= 700 A, T
J
= 25
o
C
1.2
V
I
F
= 700 A, T
J
= 140
o
C
T
J
, T
STG
125
o
C
R
JC
0.042
o
C/W
Repetitive Peak Reverse
Voltage
CAO 05/28/09
Off-State rate of Change of
Voltage Immunity
Operating Junction and Storage
Temperature
Thermal Resistance from
Junction to Case (Per Diode)