Silicon Power CCS AB 53N30_N-Type Semiconductor Discharge Switch, SOT-227 - Manual (Page 5)

Packaging and Handling
Dimensions and Terminal Assignments
1. ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE
SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS. Proper handling procedures must be
observed to prevent electrostatic discharge which may result in permanent damage to the device.
2. Use of a seperate gate return path instead of the cathode power contact is recomended to minimize the
effects of rapidly changing Anode-Cathode currents.
3. Shorting resistor R
GK
is application specific. It can control the gate drive requirements and some device
properties. However, R
GK
= 10 Ohms satisfies most application requirements.
4. Installation reflow temperature should not exceed 260°C or internal package degradation may result.
T =125oC,
V GE =15V
T C =125 o C, V GE =15V
Solidtron TM
N-Type Semiconductor Discharge Switch, SOT-227
Data Sheet (Rev 0 - 03/30/09)
CCSAB53N30A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Revision History
Rev EA #
0 04242009-NB-0014
Date Nature of Change
03/30/2009 Initial Issue
CAO 05/28/09 CAO 05/28/09