Silicon Power CCS AB 53N30_N-Type Semiconductor Discharge Switch, SOT-227 - Manual (Page 3)

Typical Performance Curves (Continued)
Figure 3. Predicted I
2
t data for various number of discharge cycles. Pulses are assumed rectangular.
The device junction temperature T
J
is assumed to be at 25
o
C before each discharge event.
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
CCSAB53N30A10
Solidtron TM
N-Type Semiconductor Discharge Switch, SOT-227
Data Sheet (Rev 0 - 03/30/09)
The device junction temperature T
J
is assumed to be at 25 C before each discharge event.
Test Circuit
Figure 4. Typical test circuit and waveforms.
CAO 05/28/09
L
SERIES(TOTAL)
can be caculated using
equation 1 / (f 2π) 2 C where f = frequency of I
K
when using CCSTA53N30 for circuit set up and
calibration.
The waveform shown is representative of one
produced using the test circuit shown where the
DUT is the CCSTA53N30 Solidtron.
The C1
capacitor voltage in this example was at 2.1kV.
Ik peaked at 4kA at 1us and the peak gate
current Ig is 1A. I
C1
V
A-K DUT
I
k DUT
R
1
D
2
D
1
L
1
C
1
DUT
D
4
D
3
R
2
T
1
R
1
=1 ohm
R
2
=10 ohms
C
1
=6 uF
L
1
~45uH
CAO 05/28/09