Silicon Power CCS AC 43N40_N-Type Semiconductor Discharge Switch, Bare Die - Manual (Page 3)

CCSAC43N40A10
N-Type Semiconductor Discharge Switch, Bare Die
3
Data Sheet (Rev 0- ##/##/####)
Silicon Power Corporation
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
www.siliconpower.com
Absolute Maximum Ratings Symbol Value Units
Peak Off-State Voltage V
DRM
4 kV
Peak Reverse Voltage V
RRM
-5 V
Off-State Rate of Change of Voltage Immunity dv/dt 1 kV/µSec
Continuous Anode Current at Tj = 125 ⁰C I
A110
50 A
Repetitive Peak Anode Current (Pulse Width = 10µSec) I
ASM
5.0 kA
Nonrepetitive Peak Anode Current (Pulse Width=10uSec) I
ASM
8 kA
Rate of Change of Current di/dt 25 kA/µSec
Peak Gate Current (1µSec) I
Gpk
50 A
Max. Reverse Gate-Cathode Voltage V
GR
-9 V
Maximum Junction Temperature T
JM
125 ⁰C
Maximum Soldering Temperature (Installation) 320 ⁰C
Performance Characteristics
(T
J
= 25 ⁰C unless otherwise specified.)
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage V
DR
G to K shorted, I
A
=1mA 4 kV
Anode-Cathode Off-State Current I
D
G to K shorted, V
AK
=4000V T
J
=25 o C 0.5 1 uA
T
J
=125 o C 100 800 uA
Turn-On Threshold Current V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA , see Note: 1 70 mA
Gate-Cathode Leakage Current I
GK(lkg)
V
GK
=-9V, see Note: 1 -20 uA
Anode-Cathode On-State Voltage V
T
I
T
=100A T
J
=25 o C 1.8 V
Ig = 500 mA T
J
=125 o C 2 V
Turn-on Delay Time t
D(ON)
C=0.75 uF Capacitor discharge
160 ns
Pk Rate of Change of Current (measured) dI/dt Ls=150nH 25 kA/us
Peak Anode Current I
P
R
gk
= 10 ohms
V
AK
= 3750
V 2950 A
Gate di/dt =100
A/us
T
c
=25 ° C
Notes:
1. Measurements made with a 10 Ohm shorting resistor connected
between the gate and cathode.