Silicon Power SMCT AA 65N14_N-MOS VCS, TO-247 - Manual (Page 5)

Application Notes
Packaging and Handling
C
a
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A1. Use of Gate Return
The VCS was designed for high di/dt applications. An independent cathode connection for use as "gate return" is provided
on pin 2 to minimize the effects of rapidly changing Anode-Cathode current on the Gate control voltage, (V=L*di/dt). It is
therefore, critcal that the user utilize the Gate Return as the point at which the gate driver reference (return) is attached to the
VCS device.
Solidtron TM
N-MOS VCS, TO-247
Data Sheet (Rev 0 - 02/15/08)
SMCTAA65N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
CAO 05/28/09
Pin 1 : Gate
Pin 2 : Gate return
Pin 3 : Anode
Pin 4 : Cathode
Pin 5 : Cathode
1
General Handling Precautions
1. Installation reflow temperature should not exceed 260 o C or
internal package degradation may result.
2. As with all MOS gated devices, proper handling
procedures must be observed to prevent electrostatic
discharge which may result in permanent damage to the gate
of the device
'ATTENTION OBSERVE PRECAUTIONS FOR HANDLING
ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN
ALL ASSEMBLY AND TEST AREAS'
CAO 05/28/09