Diodes DMG6602SVT - Manual (Page 8)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
8 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
AP
A
C
IT
A
N
C
E (
p
F
)
T
10
100
1000
0 5 10 15 20 25 30
f = 1MHz
C Ave(pF)
ISS
C Ave(pF)
OSS
C Ave(pF)
RSS
0
2
4
6
8
10
0 2 4 6 8 10
V = -15
I = -3A
DS
D
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 21 Gate Charge
-V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 22 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 23 Transient Thermal Resistance
r(
t)
, TRANS
IENT THERM
A
L
RE
SI
ST
ANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 164C/W
Duty Cycle, D = t1/ t2
θJA
θ θ JA JA