Diodes DMG6602SVT - Manual (Page 4)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
4 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
I , DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AI
N-
S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
0.01
0.1
1
0 4 8 12 16 20
R ( ) Ave @ V =4.5V
DS(ON) G
Ω
R ( ) Ave @ V =10V
DS(ON) G
Ω
I , DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AI
N-
S
O
U
R
CE
O
N-
R
ESI
S
T
ANCE(
)
DS
(O
N)
Ω
0
0.04
0.08
0.12
0.16
0 2 4 6 8 10
V = 4.5V
GS
Ave R ( ) @ 150°C
DS(ON)
Ω
Ave R ( ) @ -55°C
DS(ON)
Ω
Ave R ( ) @ 25°C
DS(ON)
Ω
Ave R ( ) @ 85°C
DS(ON)
Ω
Ave R ( ) @ 125°C
DS(ON)
Ω
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 5 On-Resistance Variation with Temperature
R
, DR
AI
N-SOUR
CE
ON-RE
S
IS
T
A
NC
E
(No
rma
liz
e
d
)
DS
(O
N)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 6 On-Resistance Variation with Temperature
R
, DRAI
N
-S
OURCE
ON-
R
ESI
ST
ANCE
DS
(O
N)
0
0.02
0.04
0.06
0.08
0.1
0
0.4
0.8
1.6
1.2
2.4
-50 -25 0 25 50 75 100 125 150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 250 A
D
μ
I = 1mA
D
2.0
I
, SOURCE
CURREN
T
(
A
)
S
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
10
V (V) @ V =0V T = 25 C
SD DS A
°