Diodes DMG6602SVT - Manual (Page 6)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
6 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics – Q2 PMOS
@ T A = 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
- - -1.0 µA V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±100 nA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1.0 - -2.3 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
73
99 95
140
m Ω
V
GS
= -10V, I
D
= -2.7A
V
GS
= -4.5V, I
D
= -2A
Forward Transfer Admittance |Y
fs
| - 6 - S V
DS
= -5V, I
D
= -2.7A
Diode Forward Voltage V SD
- -0.8 -1.0 V V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 350 420
pF
V DS = -15V, V GS = 0V,
f = 1.2MHz
Output Capacitance C
oss
- 50 100
Reverse Transfer Capacitance C
rss
- 45 80
Gate Resistance R
g
- 17.1 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V GS = -4.5V) Q g
- 4 6
nC
V DS = -15V, V GS = -4.5V, I D = -3A
Total Gate Charge (V
GS
= -10V) Q
g
- 7 9
V
DS
= -15V, V
GS
= -10V, I
D
= -3A Gate-Source Charge Q
gs
- 0.9 -
Gate-Drain Charge Q gd
- 1.2 -
Turn-On Delay Time t
D(on)
- 4.8 -
ns
V
GS
= -10V, V
DS
= -15V,
R
G
= 6 Ω, R
L
= 15 Ω
Turn-On Rise Time t
r
- 7.3 -
Turn-Off Delay Time t
D(off)
- 20 -
Turn-Off Fall Time t
f
- 13 -
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN -SOURCE VOLTAGE(V)
Fig. 12 Typical Output Characteristics
DS
0.0
2.0
4.0
6.0
8.0
I
, DR
AIN CUR
RENT
D
V , GATE SOURCE VOLTAGE(V)
Fig. 13 Typical Transfer Characteristics
GS
I,
D
R
AI
N
C
U
R
R
E
N
T (
A
)
D
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5