Diodes DMG6602SVT - Manual (Page 7)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
7 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
I , DRAIN SOURCE CURRENT
Fig. 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,DR
AI
N-
SO
UR
CE O
N
-R
ESI
ST
AN
CE(
)
DS
(O
N)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 2
R ( ) Ave @ V =2.5V
DS(ON) G
Ω
R ( ) Ave @ V =4.5V
DS(ON) G
Ω
R ( ) Ave @ V =10V
DS(ON) G
Ω
4 8 6 0 2 4 6 8
I , DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, DRAI
N
-S
O
URC
E
O
N
-RESI
ST
ANCE(
)
DS
(O
N)
Ω
V = 4.5V
GS
0
0.04
0.08
0.12
0.16
0.2
Ave R ( ) @ 150°C
DS(ON)
Ω
Ave R ( ) @ -55°C
DS(ON)
Ω
Ave R ( ) @ 25°C
DS(ON)
Ω
Ave R ( ) @ 85°C
DS(ON)
Ω
Ave R ( ) @ 125°C
DS(ON)
Ω
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 16 On-Resistance Variation with Temperature
R
, DRAI
N-
S
OURCE
ON-
RESI
S
T
A
NCE
(N
or
m
a
lize
d)
DS
(O
N)
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 17 On-Resistance Variation with Temperature
R
, DR
AI
N
-SO
U
RCE
O
N
-R
ESI
S
T
AN
CE
(
)
DS(
O
N)
Ω
0
0.04
0.08
0.12
0.16
0.2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
0
0.4
0.8
1.2
1.6
2
V
, G
A
T
E
THRES
H
O
L
D VO
L
T
AG
E
(V
)
GS
(T
H
)
V , SOURCE -DRAIN VOLTAGE (V)
SD
Fig. 19 Diode Forward Voltage vs. Current
I
, SOUR
CE CURR
E
NT
(
V
)
S
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4