Diodes DMG6602SVT - Manual (Page 2)

DMG6602SVT
Document number: DS35106 Rev. 6 - 2
2 of 10
www.diodes.com
May 2012
© Diodes Incorporated
DMG6602SVT
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings – Q1
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
3.4
2.7
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T A = 70°C
I
D
2.7
2.2
A
Maximum Continuous Body Diode Forward Current (Note 5) I S 1.5 A
Pulsed Drain Current (Note 5) I
DM
25 A
Maximum Ratings – Q2
@TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-2.8
-2.4
A
Continuous Drain Current (Note 5) V GS = -4.5V
Steady
State
T A = 25°C
T
A
= 70°C
I D
-2.3
-2.1
A
Maximum Continuous Body Diode Forward Current (Note 5) I S -1.5 A
Pulsed Drain Current (Note 5) I D
-20 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P D
0.84
W
T
A
= 70°C 0.52
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
155
°C/W
t<10s 109
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1.27
W
T
A
= 70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
102
°C/W t<10s 71
Thermal Resistance, Junction to Case (Note 5) R θJC 34
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.