Dmg1016udw new prod uc t, P-channel – q2, Dmg1016udw – Diodes DMG1016UDW User Manual
Page 6
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
6 of 9
January 2014
© Diodes Incorporated
DMG1016UDW
NEW PROD
UC
T
P-CHANNEL – Q2
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
5
Fig. 12 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
V
= -2.0V
GS
V
= -4.5V
GS
V
= -3.0V
GS
V
= -1.5V
GS
V
= -8.0V
GS
V
= -2.5V
GS
-I
, DRA
IN
C
URREN
T
(A)
D
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 13 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -5V
DS
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
Ω
V
= -4.5V
GS
V
= -2.5V
GS
V
= -1.8V
GS
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
-I , DRAIN CURRENT (A)
D
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 16 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, D
R
AIN-
S
O
URCE
ON-
R
ES
IST
A
NCE (
N
ORM
A
LI
Z
E
D)
DS
O
N
V
= -4.5V
I = -500mA
GS
D
V
= -2.5V
I = -250mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
Fig. 17 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N-
SO
URCE
O
N
-R
ESI
S
TA
N
CE (
)
DS
O
N
Ω
V
= -4.5V
I = -500mA
GS
D
V
= -2.5V
I = -250mA
GS
D