Diodes DMG1016UDW - Manual (Page 2)

DMG1016UDW
Document number: DS31860 Rev. 6 - 2
2 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMG1016UDW
NEW PROD
UC
T
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
330 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
379 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Maximum Ratings N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±6 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
1066
690
mA
Maximum Ratings P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V
GSS
±6 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-845
-548
mA
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current @T
C
= +25°C I
DSS
— — 100 nA V
DS
=20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±1.0 μA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 0.3 0.45
Ω
V
GS
= 4.5V, I
D
= 600mA
0.4 0.6 V
GS
= 2.5V, I
D
= 500mA
0.5 0.75 V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance |Y
fs
| — 1.4 — S V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage (Note 6) V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 60.67 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 9.68 — pF
Reverse Transfer Capacitance C
rss
— 5.37 — pF
Total Gate Charge (4.5V) Q
g
— 736.6 — nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
— 93.6 — nC
Gate-Drain Charge Q
gd
— 116.6 — nC
Turn-On Delay Time t
D(on)
— 5.1 — ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47Ω, R
G
= 10Ω,
Turn-On Rise Time t
r
— 7.4 — ns
Turn-Off Delay Time t
D(off)
— 26.7 — ns
Turn-Off Fall Time t
f
— 12.3 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.