Diodes DMG1016UDW - Manual (Page 5)

DMG1016UDW
Document number: DS31860 Rev. 6 - 2
5 of 9
www.diodes.com
January 2014
© Diodes Incorporated
DMG1016UDW
NEW PROD
UC
T
Electrical Characteristics P-CHANNEL – Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current @T
c
= +25°C I
DSS
— — -100 nA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±2.0 μA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5 — -1.0 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
— 0.5 0.75
Ω
V
GS
= -4.5V, I
D
= -430mA
0.7 1.05 V
GS
= -2.5V, I
D
= -300mA
1.0 1.5 V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
| — 0.9 — S V
DS
= -10V, I
D
= -250mA
Diode Forward Voltage (Note 6) V
SD
— -0.8 -1.2 V V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 59.76 — pF
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 12.07 — pF
Reverse Transfer Capacitance C
rss
— 6.36 — pF
Total Gate Charge (4.5V) Q
g
— 622.4 — pC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge Q
gs
— 100.3 — pC
Gate-Drain Charge Q
gd
—
132.2
—
pC
Turn-On Delay Time t
D(on)
— 5.1 — ns
V
DS
= -10V, V
GS
= -4.5V,
R
G
= 10Ω, R
L
= 47Ω
Turn-On Rise Time t
r
— 8.1 — ns
Turn-Off Delay Time t
D(off)
— 28.4 — ns
Turn-Off Fall Time t
f
— 20.72 — ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing