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Dmg1016udw new prod uc t, N-channel – q1, Dmg1016udw – Diodes DMG1016UDW User Manual

Page 3

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DMG1016UDW

Document number: DS31860 Rev. 6 - 2

3 of 9

www.diodes.com

January 2014

© Diodes Incorporated

DMG1016UDW

NEW PROD

UC

T

N-CHANNEL – Q1

0

0.2

0.4

0.6

0.8

1.0

0 0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

I,

D

R

A

IN

C

U

R

R

E

N

T

(

A

)

D

V

= 1.5V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 1.2V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

0.2

0.4

0.6

0.8

1.0

0

0.5

1

1.5

2

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I,

D

R

A

IN

C

U

R

R

EN

T

(

A

)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

0.2

0.4

0.6

0.8

1.0

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

R

,

DR

A

IN-S

O

U

RCE

ON-RE

S

IS

TA

NC

E

(

)

DS

(O

N)

Ω

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.8V

GS

0

0.1

0.2

0.3

0.4

0.5

0

0.2

0.4

0.6

0.8

1.0

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R

, D

R

A

IN

-S

OU

R

C

E

ON

-R

E

S

IS

TA

N

C

E

()

DS

(O

N)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 5 On-Resistance Variation with Temperature

-50 -25

0

V

= 2.5V

I = 250mA

GS

D

25

50

75

100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, DR

A

IN-

SO

URCE

O

N

-R

ES

IS

TA

N

C

E (

N

O

R

M

A

LI

ZED

)

DS

O

N

V

= 4.5V

I = 500mA

GS

D

0

0.2

0.4

0.6

0.8

Fig. 6 On-Resistance Variation with Temperature

-50 -25

0

25

50

75

100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, DRA

IN

-S

O

URCE

ON

-RE

S

IS

TA

NCE (

)

DS

O

N

Ω

V

= 4.5V

I = 500mA

GS

D

V

= 2.5V

I = 250mA

GS

D