Dmg1016udw new prod uc t, N-channel – q1, Dmg1016udw – Diodes DMG1016UDW User Manual
Page 3

DMG1016UDW
Document number: DS31860 Rev. 6 - 2
3 of 9
January 2014
© Diodes Incorporated
DMG1016UDW
NEW PROD
UC
T
N-CHANNEL – Q1
0
0.2
0.4
0.6
0.8
1.0
0 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
A
IN
C
U
R
R
E
N
T
(
A
)
D
V
= 1.5V
GS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 1.2V
GS
V
= 4.5V
GS
V
= 8.0V
GS
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1
1.5
2
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
A
IN
C
U
R
R
EN
T
(
A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1.0
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
,
DR
A
IN-S
O
U
RCE
ON-RE
S
IS
TA
NC
E
(
)
DS
(O
N)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
V
= 1.8V
GS
0
0.1
0.2
0.3
0.4
0.5
0
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
A
IN
-S
OU
R
C
E
ON
-R
E
S
IS
TA
N
C
E
()
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25
0
V
= 2.5V
I = 250mA
GS
D
25
50
75
100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DR
A
IN-
SO
URCE
O
N
-R
ES
IS
TA
N
C
E (
N
O
R
M
A
LI
ZED
)
DS
O
N
V
= 4.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
Fig. 6 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN
-S
O
URCE
ON
-RE
S
IS
TA
NCE (
)
DS
O
N
Ω
V
= 4.5V
I = 500mA
GS
D
V
= 2.5V
I = 250mA
GS
D