Diodes DMG1016UDW - Manual (Page 4)

DMG1016UDW
Document number: DS31860 Rev. 6 - 2
4 of 9
www.diodes.com
January 2014
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DMG1016UDW
NEW PROD
UC
T
N-CHANNEL – Q1
(cont.)
0
0.4
0.8
1.2
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, GA
TE
TH
RE
SHOLD
VOL
TAGE
(V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0
0.2
0.4
0.6
0.8
1.0
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(
A
)
S
T = 25°C
A
1
10
100
0 20
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
5 15 10
C
, C
A
P
A
C
IT
A
N
C
E
(p
F
)
C
iss
C
rss
C
oss
1
10
100
1,000
0 4 8 12 16 20
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t)
, T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
R
E
S
IS
TA
N
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 260°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5