Diodes AZV831/2 - Manual (Page 9)

Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
9
AZV831/2
5.0V DC Electrical Characteristics
V
CC
=5.0V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25 °C, unless otherwise noted.
Parameter Symbol Conditions Min Typ Max Unit
Input Offset Voltage V
OS
0.5 2.5 mV
Input Bias Current I
B
1.0 pA
Input Offset Current I
OS
1.0 pA
Input Common-mode Voltage Range V
CM
-0.3 5.3 V
Common-mode Rejection Ratio CMRR
V
CM
=-0.3V to 3.8V 70 85
dB
V
CM
=-0.3V to 5.3V 65 90
Large Signal Voltage Gain G
V
R
L
=1kΩ to V
CC
/2,
V
OUT
=0.2V to 4.8V
80 92
dB
R
L
=10kΩ to V
CC
/2,
V
OUT
=0.05V to 4.95V
85 98
Input Offset Voltage Drift ∆V
OS
/∆T 2.0 µV/ °C
Output Voltage Swing from Rail V
OL
/V
OH
R
L
=1kΩ to V
CC
/2 25 50
mV
R
L
=10kΩ to V
CC
/2 4 15
Output Current
Sink I
SINK
V
OUT
=V
CC
100 150
mA
Source I
SOURCE
V
OUT
=0V 110 185
Closed-loop Output Impedance f=1kHz, A
V
=1 9 Ω
Power Supply Rejection Ratio PSRR V
CC
=1.6V to 5.0V 66 80 dB
Supply Current (Per Amplifier) I
CC
V
OUT
=V
CC
/2, I
OUT
=0 70 90 µA
5V AC Electrical Characteristics
V
CC
=5.0V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25°C, unless otherwise noted.
Parameter Symbol Conditions Min Typ Max Unit
Gain Bandwidth Product GBP R
L
=100kΩ 1.0 MHz
Slew Rate (Note 2) SR
2V Step,
C
L
=100pF, R
L
=10kΩ
0.45 V/µs
Phase Margin φ
M
R
L
=100kΩ 67 Degrees
THD+N THD+N
f=1kHz, A
V
=1, V
IN
=1V
PP
R
L
=10kΩ,C
L
=100pF
-70 dB
Voltage Noise Density e
n
f=1kHz 27
Hz nV/
Note 2: Number specified is the positive slew rate.