Preliminary datasheet, 6v ac electrical characteristics, Parameter symbol conditions min typ max unit – Diodes AZV831/2 User Manual
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Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
6
AZV831/2
1.6V DC Electrical Characteristics
V
CC
=1.6V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25
°C, unless otherwise noted.
Parameter Symbol
Conditions
Min
Typ
Max Unit
Input Offset Voltage
V
OS
0.5
2.5
mV
Input Bias Current
I
B
1.0 pA
Input Offset Current
I
OS
1.0 pA
Input Common-mode Voltage Range
V
CM
-0.2 1.8 V
Common-mode Rejection Ratio
CMRR V
CM
=-0.2V to 1.8V
55
75
dB
Large Signal Voltage Gain
G
V
R
L
=10kΩ to V
CC
/2,
V
OUT
=0.2V to 1.4V
90 110 dB
Input Offset Voltage Drift
∆V
OS
/∆T
2.0
µV/
°C
Output Voltage Swing from Rail
V
OL
/V
OH
R
L
=1kΩ to V
CC
/2
30
50
mV
R
L
=10kΩ to V
CC
/2
3
15
Output Current
Sink I
SINK
V
OUT
=V
CC
8
10
mA
Source I
SOURCE
V
OUT
=0V 5
8.5
Closed-loop Output Impedance
Z
OUT
f=10kHz,
A
V
=1
9
Ω
Power Supply Rejection Ratio
PSRR
V
CC
=1.6V to 5.0V
66 80 dB
Supply Current (Per Amplifier)
I
CC
V
OUT
=V
CC
/2, I
OUT
=0
70
90
µA
1.6V AC Electrical Characteristics
V
CC
=1.6V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25
°C, unless otherwise noted.
Parameter Symbol
Conditions
Min
Typ
Max
Unit
Gain Bandwidth Product
GBP
R
L
=100kΩ
1.0
MHz
Slew Rate (Note 2)
SR
1V Step,
C
L
=100pF, R
L
=10kΩ
0.32 V/µs
Phase Margin
φ
M
R
L
=100kΩ
67
Degrees
Total Harmonic Distortion+Noise
THD+N
f=1kHz, A
V
=1, V
IN
=1V
pp
R
L
=10kΩ, C
L
=100pF
-70 dB
Voltage Noise Density
e
n
f=1kHz
27
Hz
nV/
Note 2: Number specified is the positive slew rate.
.