Diodes AZV831/2 - Manual (Page 8)

Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
Jul. 2012 Rev. 1. 0 BCD Semiconductor Manufacturing Limited
8
AZV831/2
3.0V DC Electrical Characteristics
V
CC
=3.0V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25 °C, unless otherwise noted.
Parameter Symbol Conditions Min Typ Max Unit
Input Offset Voltage V
OS
0.5 2.5 mV
Input Bias Current I
B
1.0 pA
Input Offset Current I
OS
1.0 pA
Input Common-mode Voltage Range V
CM
-0.3 3.3 V
Common-mode Rejection Ratio CMRR
V
CM
=-0.3V to 1.8V 62 80
dB
V
CM
=-0.3V to 3.3V 58 75
Large Signal Voltage Gain G
V
R
L
=1kΩ to V
CC
/2 ,
V
OUT
=0.2V to 2.8V
90 110
dB
R
L
=10kΩ to V
CC
/2,
V
OUT
=0.1V to 2.9V
95 115
Input Offset Voltage Drift ∆V
OS
/∆T 2.0 µV/ °C
Output Voltage Swing from Rail V
OL
/V
OH
R
L
=1kΩ to V
CC
/2 20 50
mV
R
L
=10kΩ to V
CC
/2 3 15
Output Current
Sink I
SINK
V
OUT
=V
CC
50 60
mA
Source I
SOURCE
V
OUT
=0V 50 65
Closed-loop Output Impedance Z
OUT
f=10kHz 9 Ω
Power Supply Rejection Ratio PSRR V
CC
=1.6V to 5.0V 66 80 dB
Supply Current (Per Amplifier) I
CC
V
OUT
=V
CC
/2, I
OUT
=0 70 90 µA
3.0V AC Electrical Characteristics
V
CC
=3.0V, V
EE
=0, V
OUT
=V
CC
/2, V
CM
=V
CC
/2, T
A
=25 °C, unless otherwise noted.
Parameter Symbol Conditions Min Typ Max Unit
Gain Bandwidth Product GBP R
L
=100kΩ 1.0 MHz
Slew Rate (Note 2) SR
G=1, 2V Step,
C
L
=100pF, R
L
=10kΩ
0.40 V/µs
Phase Margin φ
M
R
L
=100kΩ 67 Degrees
Total Harmonic Distortion+Noise THD+N
f=1kHz, G=1, V
IN
=1V
pp
R
L
=10kΩ, C
L
=100pF
-70 dB
Voltage Noise Density e
n
f=1kHz 27
Hz nV/
Note 2: Number specified is the positive slew rate.