Diodes AP2210 - Manual (Page 23)

300mA RF ULDO REGULATOR AP2210
Data Sheet
23
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature
-50 -25 0 25 50 75 100 125
0
2
4
6
8
10
12
14
16
18
20
Enab
le Curr
e
nt
(
µ
A)
Junction Temperature ( o C)
AP2210-3.0
V
IN
=4V, C
IN
=1.0 µ F
C
OUT
=2.2 µ F, I
OUT
=100 µ A
V
EN
=1.8V
V
EN
=2.0V
V
EN
=3.0V
V
EN
=3.7V
-50 -25 0 25 50 75 100 125
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
EN
=logic high
V
EN
=logic low
AP2210-3.0
C
IN
=1.0 µ F, C
OUT
=2.2 µ F
V
IN
=4V, I
OUT
=100 µ A
Enab
le V
ol
tage
(V
)
Junction Temperature ( o C)
10 100 1k 10k 100k 1M 10M
10
1
0.1
0.01
0.001
Frequency (Hz)
AP2210-3.0
V
IN
=4.5V, I
OUT
=10mA
C
IN
=1.0 µ F, C
OUT
=2.2 µ F
C
BYP
=100pF
O
utput
Noi
se (
)
0.0001
µV/
H
z
Figure 10. Output Noise vs. Frequency Figure 11. Line Transient
(Conditions: V
IN
=4 to 5V, V
EN
=2V, I
OUT
=1mA,
C
OUT
=2.2 µF)
AP2210-3.0
∆
V
OUT
(5
0m
V/D
iv
)
V
IN
(0
.5
V/D
iv)
4
4.5
0
50
Time (20 µs/Div)
5
5.5
-50
-100