Diodes AP2210 - Manual (Page 20)

300mA RF ULDO REGULATOR AP2210
Data Sheet
20
Jan. 2012 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ∆V
OUT
/V
OUT
Variation from specified
V
OUT
-1 1
%
-2 2
Output Voltage
Temperature Coefficient
(Note 3) ∆V
OUT
/ ∆T 120 µV/ o C
( ∆V
OUT
/V
OUT
)/ ∆T 48
ppm/ o C
Line Regulation V
RLINE
V
IN
=V
OUT
+1V to 13.2V
1.5 4.5
mV
12
Load Regulation
(Note 4)
V
RLOAD
I
OUT
=0.1mA to 300mA
1 6
mV
30
Standby Current I
STD
V
EN
≤0.4V (shutdown) 0.01 1
µA
V
EN
≤0.18V (shutdown) 5
Ground Pin Current
(Note 6)
I
GND
V
EN
≥2.0V, I
OUT
=100 µA
100 150
µA
180
V
EN
≥2.0V, I
OUT
=50mA
350 600
800
V
EN
≥2.0V, I
OUT
=150mA
1.3 1.9
mA
2.5
V
EN
≥2.0V, I
OUT
=300mA
4 10
15
Ripple Rejection PSRR f=100Hz, I
OUT
=100 µA 75 dB
Current Limit I
LIMIT
V
OUT
=0V 450 900 mA
Output Noise e
no
I
OUT
=50mA, C
OUT
=2.2 µF,
100pF from BYP to GND
260
Enable Input Logic-low
Voltage
V
IL
Regulator shutdown
0.4
V
0.18
Enable Input Logic-high
Voltage
V
IH
Regulator enabled 2.0 V
Enable Input Logic-low
Current
I
IL
V
IL
≤0.4V 0.01 1
µA
V
IL
≤0.18V 2
Enable Input Logic-high
Current
I
IH
V
IL
≥2.0V 5 20
µA
V
IL
≥2.0V 25
Hz nV /
V
IN
=V
OUT
+1V, I
OUT
=100 µA, C
IN
=1.0 µF, C
OUT
=2.2 µF, V
EN
≥2.0V, T
J
=25 o C, Bold typeface applies over -40 o C ≤T
J
≤125 o C
(Note 2), unless otherwise specified.
Electrical Characteristics (Continued)
AP2210-ADJ Electrical Characteristics